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PROFET BTS 723 GW Smart High-Side Power Switch Two Channels: 2 x 100m Status Feedback Suitable for 42V
Product Summary Package
Operating Voltage Vbb(on) Active channels On-state Resistance RON Nominal load current IL(NOM) Current limitation IL(SCr) 5.0 ...62V one two parallel 100m 50m 2.9A 4.2A 8A 8A P-DSO-14
General Description
* * * N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS 80V technology. Fully protected by embedded protection functions An array of resistors is integrated in order to reduce the external components
Applications
* * * * C compatible high-side power switch with diagnostic feedback for 12V and 24V and 42V grounded loads All types of resistive, inductive and capacitive loads Most suitable for inductive loads Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
* * * * * * * CMOS compatible input Improved electromagnetic compatibility (EMC) Fast demagnetization of inductive loads Stable behaviour at undervoltage Wide operating voltage range Logic ground independent from load ground Optimized inverscurrent capability
Block Diagram
Status pull up voltage Vbb
Protection Functions
* * * * * * * * Short circuit protection Overload protection Current limitation Thermal shutdown Overvoltage protection (including load dump) with external resistor Reverse battery protection with external resistor Loss of ground and loss of Vbb protection Electrostatic discharge protection (ESD)
IN1 ST1
Logic Channel 1 Logic Channel 2 PROFET GND
OUT 1 Load 1 OUT 2 Load 2
IN2 ST2
Diagnostic Function
* * * *
Diagnostic feedback with open drain output and integrated pull up resistors Open load detection in OFF-state Feedback of thermal shutdown in ON-state Diagnostic feedback of both channels works properly in case of inverse current
Infineon Technologies AG
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Functional diagram
11
SPU: Pin for external Pull Up Voltage Leadframe: Vbb 1, 7,
8, 14
2 IN1
R = 20k
R = 12k
Functions and Components of inputlogic and gate-control: ESD-protection Charge pump, level shifter, rectifier Gate protection Current limit Limit for unclamped inductive loads Function and components of outputlogic Open load detection Short circuit detection Temperature sensor -
OUT1
12, 13
Load 1
Load GND Vbb
3 ST1
R = 2k
Status 1 Function see truthtable Logic channel one Logic channel two Function and components of inputlogic and gate-control equivalent to channel one Function and components of outputlogic equivalent to channel one
6 IN2
R = 20k
OUT2 9, 10
5 ST2
R = 2k Status 2 Function see truthtable Load 2
Logic GND
PROFET
Load GND
4
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Pin configuration Pin Definitions and Functions
(top view)
Pin 1,7, 8,14, 2 6 12,13 9,10 3 5 4 11
Symbol Vbb IN1 IN2 OUT1 OUT2 ST1 ST2 GND SPU
Function Positive power supply voltage. Design the wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance Input 1,2 activates channel 1,2 in case of logic high signal Output 1,2 protected high-side power output of channel 1,2. Design the wiring for the max. short circuit current; both outputpins have to be connected in parallel for operation according this spec. Diagnostic feedback 1,2 of channel 1,2 open drain Logic Ground Connection for external pull up voltage source for the open drain status output. Pull up resistors are integrated.
Vbb IN1 ST1 GND ST2 IN2 Vbb
1 2 3 4 5 6 7
*
14 13 12 11 10 9 8
Vbb OUT1 OUT1 SPU OUT2 OUT2 Vbb
Infineon Technologies AG
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BTS 723 GW Maximum Ratings at Tj = 25C unless otherwise specified
Parameter Supply voltage (overvoltage protection see page 6) Supply voltage for full short circuit protection Tj,start = -40 ...+150C Load current (Short-circuit current, see page 7) Load dump protection1) VLoadDump = VA + Vs, VA = 27 V RI2) = 8 , td = 200 ms; IN = low or high, each channel loaded with RL = 20 , Operating temperature range Storage temperature range Power dissipation (DC)4) Ta = 25C: (all channels active) Ta = 85C: Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150C4), IL = 2.5 A, EAS = 110 mJ, 0 one channel: IL = 3.5 A, EAS = 278 mJ, 0 two parallel channels:
see diagrams on page 12
Symbol Vbb Vbb IL VLoad dump3) Tj Tstg Ptot
Values 62 50 self-limited 70 -40 ...+150 -55 ...+150 3.0 1.6
Unit V V A V C W
ZL VESD VIN IIN IST VSPU
23.0 30.0 1.0 42 2.0 2.0 42
mH
Electrostatic discharge capability (ESD):
(Human Body Model) acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5k; C=100pF
kV V mA V
Input voltage (DC) Current through input pin (DC) Current through status pin (DC) Status pull up voltage
1) 2) 3) 4)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 resistor for the GND connection is recommended. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. See page 15
Infineon Technologies AG
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BTS 723 GW Thermal Characteristics
Parameter and Conditions Symbol Values min typ Max ----45 41 25 --Unit
Thermal resistance junction - soldering point4),5) each channel: Rthjs 4) junction - ambient one channel active: Rthja all channels active:
K/W
Electrical Characteristics
Parameter and Conditions, each of the two channels
at Tj = -40...+150C, Vbb = 24 V unless otherwise specified
Symbol
Values min typ Max
Unit
Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT); IL = 2 A, Vbb 7V each channel, Tj = 25C: RON Tj = 150C: two parallel channels, Tj = 25C:
see diagram, page 12
----
90 170 45
100 200 50
m
5)
Soldering point: Upper side of solder edge of device pin 15. See page 15
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Parameter and Conditions, each of the two channels
at Tj = -40...+150C, Vbb = 24 V unless otherwise specified
Symbol
Values min typ Max 2.5 4.0 -2.9 4.2 ---1.0
Unit
Nominal load current
Device on PCB6), Ta = 85C, Tj 150C
one channel active: IL(NOM) two parallel channels active: IL(GNDhigh)
A mA s V/s V/s
Output current while GND disconnected or pulled up;
Vbb = 30 V, VIN = 0, see diagram page 11; (not tested specified by design)
Turn-on time7) IN Turn-off time IN RL = 12 Slew rate on 7) 10 to 30% VOUT, RL = 12 : Slew rate off 7) 70 to 40% VOUT, RL = 12 :
to 90% VOUT: ton to 10% VOUT: toff dV/dton -dV/dtoff
--1.9 1.5
-----
55 80 5 6.5
Operating Parameters Operating voltage Undervoltage restart of Tj =-40...+25C: charge pump Tj =+150C: 8) Overvoltage protection I bb = 40 mA Standby current9) Tj =-40C...+25C: Tj =+125C ( not tested, specified by design): VIN = 0; see diagram page 10 Tj =+150C: Off-State output current (included in Ibb(off)) VIN = 0; each channel Operating current 10), VIN = 5V, one channel on: all channels on:
Vbb(on) Vbb(ucp) Vbb(AZ) Ibb(off) IL(off)
6.0 --62 -----
-4 -67 13 25 3
62 5.5 7 75 23 23 35 --
V V V A A
IGND
---
1.0 2.0
1.5 3.0
mA
6)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. See page 15 7) See timing diagram on page 13. 8) Supply voltages higher than V bb(AZ) require an external current limit for the GND; a 150 resistor is recommended. See also VON(CL) in table of protection functions and circuit diagram on page 10. 9) Measured with load; for the whole device; all channels off 10) Add I , if I ST ST > 0
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Parameter and Conditions, each of the two channels
at Tj = -40...+150C, Vbb = 24 V unless otherwise specified
Symbol
Values min typ Max
Unit
Protection Functions Current limit, (see timing diagrams, page 13) Tj =-40C: IL(lim) Tj =25C: Tj =+150C: Repetitive short circuit current limit, Tj = Tjt each channel IL(SCr) two parallel channels
(see timing diagrams, page 13; not tested specified by design)
--5 ----
10 9 8 8 8 2
12 ------
A
A
Initial short circuit shutdown time
Tj,start =25C: toff(SC)
ms V
(see timing diagrams on page 13)
Output clamp (inductive load switch off)11)
at VON(CL) = Vbb - VOUT, IL= 40 mA
Thermal overload trip temperature Thermal hysteresis Reverse Battery Reverse battery voltage 12) Drain-source diode voltage (Vout > Vbb) IL = - 3.0 A, Tj = +150C Inverse current GND current in case of 3A inverse current 13)
Specified by design
VON(CL) Tjt Tjt
62 150 --
67 -10
75 ---
C K
-Vbb -VON
---
-650
24 --
V mV
IGND(inv cur)
--
--
15
mA
11)
If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest VON(CL) 12) Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and circuit page 10). 13) In case of an inverse current of 3A the both status outputs must not be disturbed. The neighbour channel can be switched normally; not all paramters lay within the range of the spec Please note, that in case of an inverse current no protection function is active. The power dissipation is higher compared to normal operation in forward mode due to the voltage drop across the drain-source diode (as it is with reverse polaritiy). If this mode lasts for a too long time the device can be destroyed.
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Parameter and Conditions, each of the two channels
at Tj = -40...+150C, Vbb = 24 V unless otherwise specified
Symbol
Values min typ Max
Unit
Diagnostic Characteristics Open load detection current Open load detection voltage Short circuit detection voltage Vbb(pin 1,7,8,14) to OUT1 (pin 12,13) resp. Vbb(pin 1,7,8,14) to OUT2 ( pin 9,10) Input and Status Feedback14) Integrated resistors; Tj =25C:
(see circuit page 2)
IL(off) VOUT(OL) VON(SC)
-2.0 --
3 2.85 4.0
-3.7 --
A V V
Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current On state input current Status output (open drain) Zener limit voltage ST low voltage
Input RI Status RST Status pull up Rpull up VIN(T+) VIN(T-) VIN(T) VIN = 0.4 V: IIN(off) VIN = 5 V: IIN(on) VST(high) VSPU = 5V: VST(low)
---1.2 1.0 -1 10 5.4 --
20 2 12 --0.25 -25 6.1 --
---2.2 --15 50 -0.4
k k k V V V A A V
14)
If a ground resistor RGND is used, add the voltage drop across these resistors.
Infineon Technologies AG
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BTS 723 GW Truth Table
Channel 1 Channel 2 Normal operation Open load Input 1 Input 2 level L H L H L H L H L H Output 1 Output 2 level L H VOUT > 2.7V H L L H H L L Status 1 Status 2
BTS 723
L H H H L L H H L L
Short circuit to GND Short circuit to Vbb Overtemperature
Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel. In this mode it is recommended to use only one status.
Terms
Ibb V bb Leadframe I IN1 2 I ST1 V IN1 VST1 3 ST1 IN1 Vbb I L1 PROFET OUT1 Channel 1 GND 12,13 VOUT1 V VON1 I ST2 IN2 VST2 6 ST2 I IN2 5 IN2 Leadframe Vbb I L2 PROFET OUT2 Channel 2 GND VOUT2 4 I GND R GND 9,10 VON2
Leadframe (Vbb) is connected to pin 1,7,8,14 External RGND optional; a single resistor RGND = 150 for reverse battery protection up to the max. operating voltage.
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Input circuit (ESD protection), IN1 or IN2
R IN I
Inductive and overvoltage output clamp,
OUT1 or OUT2
+Vbb VZ
ESD-ZD I GND
I
I
V
ON
OUT
The use of ESD zener diodes as voltage clamp at DC conditions is not recommended.
Status output, ST1 or ST2
Power GND
VON clamped to VON(CL) = 67 V typ.
Status Pull Up Voltage R ST(ON)
RPull up
ST
Overvolt. and reverse batt. protection
Status pull up voltage + Vbb
RST
ESDZD GND
IN ST
R Status puul up RI Logic
V
Z2
OUT
ESD-Zener diode: 6.1 V typ., RST(ON) < 250 , RST = 2 k typ., Rpull up = 12 k typ. The use of ESD zener diodes as voltage clamp at DC conditions is not recommended
R ST
V Z1
PROFET
GND
R Load
R GND
Short Circuit detection
Fault Signal at ST-Pin: VON > 4.0 V typ, no switch off by the PROFET itself, external switch off recommended!
+ V bb
Signal GND
Load GND
VZ1 = 6.1 V typ., VZ2 = 67 V typ., RGND = 150 ,
RI = 2 k=typ.,=RST = 20 k typ., Rpull up = 12 k typ
In case of reverse battery the load current has to be limited by the load. Temperature protection is not active
V ON
OUT
Logic unit
Short circuit detection
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Open-load detection, OUT1 or OUT2
OFF-state diagnostic condition: Open load, if VOUT > 2.7 V typ. (IN low) IL(OL) typ. 2A An external resitor can be used to increase the open load detection current
V bb
Vbb disconnect with energized inductive load
high
IN
Vbb PROFET OUT
ST GND
V ON
OFF OUT
I
V
bb
Logic unit
Open load detection
L(OL)
For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 12) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current flows through the GND connection.
Signal GND
GND disconnect
IN
Vbb PROFET OUT
ST GND V bb V IN V ST V GND
Any kind of load. Due to VGND > 0, no VST = low signal available.
GND disconnect with GND pull up
IN
Vbb PROFET OUT
ST GND
V
V bb
V IN ST
V
GND
Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND > 0, no VST = low signal available.
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Typ. on-state resistance Inductive load switch-off energy dissipation
E bb E AS Vbb PROFET OUT ELoad
RON = f (Vbb,Tj ); IL = 2 A, IN = high RON [mOhm]
Tj = 150C 180
IN
=
ST GND ZL
{
R L
L
160
EL
ER
120 25C 80 -40C
Energy stored in load inductance: EL =
1/ *L*I 2 2 L
While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : IL* L EAS= 2*R (Vbb + |VOUT(CL)|)
L
40
0
IL*RL
3
|)
5
7
9
30
40 Vbb [V]
ln (1+ |V
OUT(CL)
Typ. standby current Maximum allowable load inductance for a single switch off (one channel)4)
L = f (IL ); Tj,start = 150C, Vbb = 12 V, RL = 0 ZL [mH]
1000
Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2,3,4 = low
Ibb(off) [A]
45 40 35 30 25 20 15 10 5 0 -50 0 50 100 150 200
100
10
1 1 2 3 4 5 6 7
Tj [C]
IL [A]
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Timing diagrams
All channels are symmetric and consequently the diagrams are valid for channel 1 and channel 2
Figure 1a: Vbb turn on, :
Figure 2b: Switching an inductive load
IN
IN
V bb
t d(bb IN)
ST
V
V
OUT
OUT
A
I
ST open drain t A
in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s
L
t
Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition:
Figure 3a: Short circuit: shut down by overtempertature, reset by cooling
IN
IN
VOUT
90% t on dV/dton 10% t dV/dtoff
V OUT normal operation Output short to GND
I
off
L
I
L(lim) I L(SCr)
IL
ST t off(SC) t
t
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Heating up requires several milliseconds, depending on external conditions. External shutdown in response to status fault signal recommended.
Figure 6: Overvoltage, no shutdown:
Figure 4a: Overtemperature: Reset if Tj IN
IN
Vbb
VON(CL)
ST V V
OUT OUT
VOUT(OL)
ST
T
J
t
t
Figure 5a: Open load, : detection in OFF-state, open load occurs in off-state
IN
ST
V
OUT
VOUT(OL) I
L
normal *)
open
normal *) t
*) IL = 2 A typ. VOUT > 2.7V
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Package and Ordering Code
Standard: P-DSO-14-9
Sales Code Ordering Code BTS 723 GW tbd
Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstrae 73, D-81541 Munchen Siemens AG 2001. All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. The characteristics for which SIEMENS grants a warranty will only be specified in the purchase contract. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing: Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorised for such purpose! Critical components15) of
All dimensions in millimetres Definition of soldering point with temperature Ts: upper side of solder edge of device pin 1.
the Semiconductor Group of Siemens AG, may only be used in life supporting devices or systems16) with the express written approval of the Semiconductor Group of Siemens AG.
Pin 1
25mm
Printed circuit board (FR4, 1.5mm thick, one layer 70m, 6cm2 active heatsink area) as a reference for max. power dissipation Ptot, nominal load current IL(NOM) and thermal resistance Rthja
15) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 16) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered.
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2001-mar-16

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